About the 1996 Electronic Materials Conference

Sponsor: Electronic Materials Committee

Date: June 26-28, 1996

Location: Santa Barbara, California

Proceedings: The papers on III-V nitrides and silicon carbide have been collected as a conference proceedings edition of Journal of Electronic Materials (March 1997 issue).

Session List

• Session A: Quantum Effect Materials: Methods of Fabrication of Quantum Dots
  
• Session B: Gallium Arsenide Processing
  
• Session C: Metal Organic Based Growth

• Session D: Quantum Effect Materials: Wires
  
• Session E: Quantum Effect Materials: Wells and Superlattices
  
• Session F: Compound Semiconductors and Oxides
  
• Session G: Epitaxy for Devices
  
• Session H: Organic Light Emitting Devices
  
• Session I: SiC Processing

• Session J: SiC Epitaxy
  
• Session K: Magnetoresistive Oxides
  
• Session L: Silicon Platforms for Integrated Optoelectronics
  
• Session M: Wide Bandgap II-VI Semiconductors
  
• Session N: Non-Stoichiometric Compound Semi-Conductors
  
• Session O: Quantum Effect Materials: Spontaneous Ordering Composition Modulation in Semiconductor Alloys
  
• Session P: Quantum Effect Materials: InAs Dots

• Session Q: Growth & Characterization of III/V Nitrides
  
• Session R: Magnetoresistive Oxides II
  
• Session S: Nondestructive Testing
  
• Session T: Defects and Device Degradation
  
• Session U: Antimonide Based Infrared Materials
  
• Session V: Nanoscale Characterization
  

• Session W: Optical and Electrical Characterization of III-V Nitrides
  
• Session X: Electronic/Photonic Oxides
  
• Session Y: Nanoscale Fabrication
  
• Session Z: Pb-Salt Infrared Materials
  
• Session AA: Si/SiGe: Defects, Processing and CVD
  
• Session BB: Quantum Effect Materials: Quantum Dots I
  

• Session CC: Growth and Processing of III-V Nitrides
  
• Session DD: Quantum Effect Materials: Quantum Dots I
  
• Session EE: MBE/CBE
  
• Session FF: Si/SiGe: Growth Optical and Electrical Properties
  
• Session GG: Quantum Effect Materials: Quantum Dots II