8:20AM, AA1
"Studies of Electrically Active Defects in Relaxed GeSi Films Using a Near-Field Scanning Optical Microscope:" J.W.P. HSU, Q. Xu, Department of Physics, University of Virginia, Charlottesville, VA 22901; E.A. Fitzgerald, Department of Materials Science and Engineering, MIT, Cambridge, MA 02139; Y.H. Xie, P.J. Silverman, AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
We report a study on the electrical activity of threading dislocation defects in relaxed GeSi films using a novel, high-resolution optical technique. A near-field scanning optical microscope (NSOM) is used to measure spatially-resolved photoresponse while simultaneously imaging the surface topography. We have convincingly established that shallow topographic depressions in these films are electrically active threading dislocations. The apparent size of the dislocations in the photovoltage images are in agreement with estimates based on the junction geometry and the near-field optical excitation spot size. We can clearly observe photoresponse changes at < 100 nm lateral scale, a ten fold improvement from far-field optical techniques. This higher resolution is due to reduction of the excitation volume and of the carrier lifetime near defects.
In addition to experimental work, we have performed two-dimensional numerical calculations of steady state carrier densities near defects. In our model, the spatial extent of the defects are assumed to be the smallest length scale and treated as delta functions. The carrier diffusion length in bulk Si is used for the defect-free region. A typical NSOM tip diameter and power density are used to determine the photoexcitation area and carrier generation rate. We will show that two defects separated by a distance much less than the diffusion length can be clearly resolved, in agreement with experimental results.
8:40AM, AA2+
"Dislocation Interaction and Doping Compensation in Compositionally Graded GexSi1-x/Si Heterostructures:" P.N. GRILLOT, S.A. Ringel, Electronic Materials & Devices Laboratory, Department of Electrical Engineering, 2015 Neil Avenue, The Ohio State University, Columbus, OH 43210-1272; E.A. Fitzgerald, J. Michel, Department of Materials Science and Engineering, M.I.T., Cambridge, MA 02139
Strain relaxation of GeSi/Si heterostructures is known to generate thermally
unstable defect states of both donor-like and acceptor-like character, where
the concentration of acceptor-like defect states exceeds the concentration of
donor-like states. In this presentation, we demonstrate that the acceptor-like
defect states are sufficient in quantity to cause background p-type
conductivity in low arsenic doped (n ~ 1 x 1014 cm-3)
Ge0.3Si0.70 layers grown on compositionally graded
GexSi1-x/Si layers at 650-800oC These p-type layers
exhibit low mobility and short carrier diffusion lengths as
determined by Hall effect and electron beam induced current measurements. The
hole concentration in the p-type region of these films is spatially invariant
in the growth direction at ~ 2 x 1014 cm-3, and is not correlated to the
dislocation density, which decreases from ~108 cm-2 in the graded region to 7 x
105 cm-2 in the 30% Ge cap layer. A 60 s rapid thermal anneal at 800oC converts
the p-type layers to n-type, which is consistent with the background n-type
conductivity of GeSi/Si films grown at 850-900oC in the same reactor.
Significant improvements in carrier lifetime, and bound exciton luminescence
and a decrease in trap concentration accompany this change in conductivity
type. These results demonstrate that the dislocations themselves are not
responsible for the observed p-type conductivity or poor material quality in
the as-grown films, but that thermally unstable defects such as intrinsic point
defects or point defect clusters are the dominant source of the observed
electrical activity. These thermally unstable defect states will be discussed
in terms of dislocation interaction within the graded region, the generation
and annihilation of intrinsic point defects, and dangling bond energy and solid
solubility limits which provide driving forces toward the formation of point
defect clusters.
9:00AM, AA3+
"Improvement in Surface Morphology and Dislocation Structure in Graded
Si-Ge/Si Structures Grown on Off-Cut Substrates:" SRIKANTH B. SAMAVEDAM,
Eugene A. Fitzgerald, Department of Materials Science and Engineering,
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA
02139
One way of fabricating a larger lattice constant material on Si is to
grow relaxed graded structures of Si-Ge. Such relaxed layers can be used for Ge
photo-detectors and field effect transistors on Si, as well as templates for
III-V integration on Si. Surface morphology and a controlled defect structure
are key issues in using these materials in device applications. In this study,
Ge/Si-Ge (graded)/Si structures were grown on Si(001) and 6o off-cut (in-plane
<110> direction) Si(001) substrates using ultra-high vacuum chemical
vapor deposition (UHVCVD) to study the effect of substrate miscut. The surface
morphology was characterized using atomic force microscopy (AFM) and the defect
structure using transmission electron microscopy (TEM) and electron beam
induced current (EBIC). The samples grown on the miscut substrate showed a
drastically lower surface roughness and a lower density of dislocation
pile-ups. Applying Freund's blocking criterion to graded Si-Ge structures, it
was possible to predict the formation of dislocation pile-ups that arise due to
the trenches in the cross-hatch pattern. Such pile-ups lead to increased
surface roughness by limiting growth along the trenches. The TEM studies
revealed that the orthogonal array of 60o dislocations that initially forms to
relieve misfit is not the lowest energy configuration of dislocations. At high
Ge concentrations in the graded buffer, the growth temperature is closer to the
melting point of the Si-Ge alloy. Hence, there is sufficient thermal energy for
the 60o dislocations to react and form a lower energy hexagonal dislocation
network with in-plane Burgers vectors of the type 1/2<110> and
<110>. Such dislocation reactions occurred more easily in the sample
grown on the miscut substrate. We show that the intersection of {111} glide
planes in the samples grown on miscut substrates aid the dislocation reactions
necessary to form this network. There was a substantial improvement in the
surface morphology and the defect structure by the use of miscut substrates for
the Si-Ge graded layers.
9:20AM, AA4
"Ion Implantation in Epitaxial GexSi1-x on Si (100):" D.Y.C. LIE, M/S
503-109, Semiconductor Systems Division, Rockwell International Corporation,
4311 Jamboree Road, Newport Beach, CA 92658-8902
The question of whether one can effectively dope or process epitaxial
Si(100)/GeSi heterostructures by ion implantation is experimentally
investigated. Results that cover several different ion species (Si, P, and As),
doses (1.0 x 1013/cm2 to 1.5 x 1015/cm2), implantation temperatures (RT. to
150deg.C), as well as annealing techniques (steady-state and rapid thermal
annealing) are included in this talk. Implantation-induced damage an strain and
their annealing behavior for both strained and relaxed GeSi are measured and
compared with those in Si and Ge. The damage and strain generated in
pseudomorphic GeSi by room-temperature implantation are considerably higher
than the values interpolated from those of Si and Ge. Implantation at slightly
elevated substrate temperatures (e.g., 100deg.C) can very effectively suppress
the implantation-induced damage and strain in GeSi. The fractions of
electricity active dopants in both Si and GeSi are measured and compared for
several doses and under various annealing conditions. Solid-phase epitaxial
regrowth of GeSi amorphized by implantation has also been studied and compared
with regrowth in Si and Ge. For the case of metastable epi-GeSi amorphized by
implantation, the pseudomorphic strain in the regrown GeSi is always lost and
the layer contains a high density of defects, which is very different from the
clean regrowth of Si(100). Solid-phase epitaxy, however, facilitates the
activation of dopants in both GeSi and Si, irrespective of the annealing
techniques used. For metastable GeSi films that are not amorphized by
implantation, rapid thermal annealing is shown to outperform steady-state
annealing for the preservation of pseudomorphic strain and the activation of
dopants. In general, defects generated by ion implantation can enhance the
strain relaxation process of strained GeSi during post-implantation annealing.
The processing window that is optimized for ion-implanted Si therefore has to
be modified considerably for ion-implanted GeSi.
9:40AM, AA5
"Low Dose BF2 Implantations into Pseudomorphic Metastable
Ge0.06Si0.94 on Si (100):" SEONGIL IM, F. Eisen, M.-A. Nicolet, M/S 116-81,
California Institute of Technology, Pasadena, CA 91125; N.D. Theodore, Motorola
Inc., Mesa, AZ 85202
Thick (260nm) pseudomorphic metastable n-type Ge0.05Si0.94 layers grown by
molecular beam epitaxy on n-type Si(100) substrate were implanted at room
temperature with 70 keV BF2+ ions to a dose of 3x1013
cm-2, so that a p-n junction is formed in the GeSi layers. The
samples were subsequently annealed for a short duration in a lamp furnace with
a nitrogen ambient, or for a long duration in a vacuum tube furnace. The Ge
concentration, crystalline quality, and strain have been characterized by
Rutherford backscattering/channeling spectrometry and double crystal x-ray
diffractometry. Crystalline quality and dislocation density were reconfirmed by
transmission electron microscopy. The percentage of dopant activation has been
measured by Hall effect equipment using van der Pauw sample geometry.
For samples annealed for both 40 s and 30 min at more than 800deg.C, full
electrical activation of p-type Ge Si layers was achieved without losing strain
in the layers, but those GeSi layers showed a much lower Hall mobility than of
p-type Si doped in the same experimental conditions. These results are
presumably because the Hall factor of heavily-doped p-type Ge Si films is much
less than unity while the Hall factor of heavily doped p-type Si or n-type Ge
Si films is close to unity [1,2,3]. When annealed at 900deg.C for 30 min, both
of the implanted and unimplanted samples showed some strain relaxation, whereas
the samples annealed at the same temperature for 40 s did not show any sign of
relaxation.
__________________________________
1) Timothy K. Carns, Sang K. Chun, Martin O. Tanner, Kang L. Wang, Ted I
Kamins, John E. Turner, Donald Y.C. Lie, Marc-A. Nicolet, and Robert G. Wilson,
IEEE Transactions on Electron Devices, 41, 1273 (1994)
10:20AM, AA6+
"Degradation of Oxides Exposed to Si2H6/Cl2/H2 Epitaxy Processes:" C.C.
HOBBS, P.A. O'Neil, H.H. Heinisch, I. Ban, S.M. Celik, P. Shamaro, M.C.
Öztürk, J.J. Wortman, North Carolina State University, ECE
Department, Box 7911, Raleigh, NC 27695
In the fabrication of advanced MOSFET and BJT structures, selective silicon
epitaxy offers new degrees of freedom. Using a Si-C1-H gas system, selective
epitaxy has been used to fabricate several novel device structures1.
Unfortunately, these gases can create damage to an exposed oxide. In previous
studies using SiH2Cl2,HCl, and H2, the observed degradation was attributed to
the silicon gas species creating a volatile SiO product at pre-existing oxide
defects2. However, in these experiments, chlorine was present due to
SiH2C12 decomposition.
This paper presents research results on degradation occurring to oxides
exposed to Si2H6/CI2/H2 based RTCVD selective silicon epitaxy
processes3. Using these source gases, the silicon and chlorine gas
species are completely decoupled. Silicon epitaxy can be grown selectively to a
critical thickness of 1000A using Si2H6 without additional
chlorine4. Thus, the effects of silicon gas species on the oxide
degradation can be completely isolated from that of chlorine.
Test structures consisting of 1000 um X 1000 um capacitors were fabricated and
tested using gate quality thermal oxide exposed to CI2 and Si2H6/H2, and
Si2H6/CI2/H2 gas mixtures in a UHV RTCVD reactor. The exposure temperature was
varied from 750deg.C to 850deg.C and the capacitor oxide
thickness was varied from 75 è to 305 è.
Leakage current and electric field breakdown (EBD) measurements were used to
determine the amount of oxide degradation. For each oxide exposed to a Cl2 or
Si2H6/CI2/H2 ambient, no degradation in the EBD was found. However the EBD was
found to be significantly lower for the Si2H6/H2 gas ambient. Using the
75è oxide exposed at 850deg.C as an example, the mean EBD was
found to be 11.2 MV/cm and 0.8 MV/cm for the pure CI2 and Si2H6/H2 gas
ambients, respectively. The data indicates that silicon supplied by the Si2H6
is primarily responsible for the degradation via volatile SiO formation. The
addition of chlorine in the presence of disilane reduces the degradation by
etching the silicon adatoms from the oxide surface before SiO formation can
occur. These results are consistent with previous findings using SiH2CI2. A
degradation model for the general Si-CI-H gas system, based upon SiO formation,
will be discussed.
_____________________________________
1. M. Goulding, J. de Phys. C2 1,745 (1991)
10:40AM, AA7
"Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon:" M.
MATSUMURA, E. Hasunuma, S. Sugahara, S. Hoshino, S. Imal, Department of
Physical Electronics, Tokyo Institute of Technology, 2-12-2, O-Okayama,
Meguro-ku, Tokyo 152, Japan
We propose here a novel atomic-layer-epitaxy (ALE) of Si with controlled
gas-phase-reaction rate of SiH2C12. Experimental results are also presented.
First successful Si-ALE has been demonstrated by alternating exposures of
SiH2C12 and atomic hydrogen (1). C1 atoms bond with Si atoms on the substrate
surface in a mono--chloride form during the Si-adsorption phase in an ALE
cycle. Thus, an ideal 1ML/cycle growth rate will be achieved only when SiHC1
radicals predominate other precursors having two C1 atoms, such as SiH2C12 or
SiC12(2). Since SiC12 radicals are both predominately by thermal dissociation
of SiH2C12, gas-phase-reaction triggered by collisions of molecules should be
introduced for dense SiHC1 radicals. We have satisfied this condition by high
pressure and long residence time of the source gas.
ALE characteristics have been investigated for the Si(111) surface. Under low gas pressure or short gas residence time conditions, the growth rate was
saturated at much less than 1ML/cycle within a wide temperature range even for
sufficient gas exposures. The rate was increased with the pressure or the
residence time, and saturated at 1ML/ cycle for more than 4mTorr and 0.2s,
respectively. The temperature window was about 60deg.C. The growth
rate under high pressure and long residence time conditions, was increased very
quickly with the gas exposure time and reached to about 0.5ML/cycle within 1s
after the start of exposure, and then it was increased gradually, saturating at
1ML/cycle for more than 10s exposure. These results can be explained well by
existence of dense SiHC1 radicals, and we can imagine the substrate surface
dynamics such that (1) SiHC1 chemisorbs dissociatively, with the SiC1 and H
coverage factors of 0.5ML, respectively, on the Si surface cleaned by atomic
hydrogen exposure in a preceding ALE cycle, and that (2) the chemisorbed H
atoms are thermally-desorbed gradually from the surface during the gas exposure
phase, resulting in the increased SiC1 coverage factor to 1ML for long
exposures. Amount of SiHC1 generated near the substrate surface was estimated
more than 2.5% of SiH2C12. We also concluded that SiC12 radicals are very
few.
References.
(1) S. Imai et al, Thin Solid Films, 225, p. 168(1993)
11:00AM, AA8+
"Electronic Properties and Gettering of Iron in p-Type Silicon:"
SONG ZHAO, Sang H. Ahn, Hiroshi Nakashima, Jorg Palm, L.C. Kimerling, Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, Department of Electrical Engineering, Kyushu University of Fukuoka
812, Japan
Fe is the most dangerous contaminant in silicon solar cell processing because
of its high diffusion coefficient and high solubility in silicon, and its
detrimental effect as minority carrier lifetime killer. Gettering processes are
integrated into device processing to remove mobile contaminants. We have
investigated the recombination behavior and gettering of Fe for silicon wafers.
The interstitial Fei and Group III impurities (B1 Al, Ga, In) form iron-
acceptor (FejAs) pairs in silicon. Both isolated Fei and FeiAs pairs introduce deep
levels in the bandgap, which act as recombination centers causing the decrease
of minority carrier lifetime. Gettering occurs by solid phase segregation into
p+ region, liquid phase segregation to molten Al during contact formation, and
outdiffusion to surfaces at interfaces. Fe gettering by backside Al contact formation for B-doped p-type silicon ([B]>>[Fe]) is a normal process in solar cell fabrication. We describe, for the first time, the gettering process of Fe quantitatively. The
donor level (Fei+/++Bs-)deg./+ at Ev+0.10eV is used as
the fingerprint to determine Fe concentration by DLTS measurements. The
minority carrier lifetime and diffusion length are measured by EBIC and RFPCD
techniques. The results show that the gettering efficiency by backside Al
contact achieves >= 98% removal of Fe for Fe-contaminated
silicon with [Fe]=l.lxlO14cm-3 under 800deg.C anneal for
two hours. The gettering is predominantly induced by solid phase segregation
since the solubility of Fe in Al-Si alloy is higher than that in silicon. Variation of the annealing temperature and time shows that gettering efficiency increases with temperature to
1000deg.C. We present a model for Fe gettering that includes the roles of
temperature, time, solubility, and nucleation precipitates. The FeiBs pair
dissociation and Fei migration are two fundamental kinetic processes involved
in solubility enhancement.
The gettering kinetics can only be well understood on the basis of
comprehensive knowledge of FeiAs pairs. We have simulated the Fei and As
pairing process in a static silicon lattice within the framework of an ionic
model considering elastic and electrostatic interactions. Different from the
conventional point charge ionic model, our calculations include a correction
that takes into account valence electron cloud-polarization which adds a short
range, attractive interaction in the FeiAs pair bonding, and silicon lattice
relaxation due to the atomic size difference. For the first time, we can
explain quantitatively, within one model, the trends among the FeiAs pair deep
level positions, configurational symmetries, and bistability.
11:20AM, AA9
LATE NEWS
11:40AM, AA10
LATE NEWS
2) J.M. McGREGOR, T. MANKU, J.-P. NOEL, D.J. ROULSTON, A. NATHAN, and D.C.
HOUGTON, Journal of Electronic Materials, 22, 319 (1993)
3) S. Im, D.Y.C. Lie, and M.-A. Nicolet "Advantage of short over long
annealing to activate As implanted in metastable psedomorphic
Ge0.08Si0.92layers on Si(100)", Journal of Applied Physics, to be published in
the issue of 5/1/1996.
2. C. Hobbs, M. Ozturk, and J. Wortman, EMC (1995)
3. K. Violette, P. O'Neil, M. Ozturk, et al, Appl. Phys. Lett. 68 1 (1996)
4. K. Violette, M. Sanganeria, M. Ozturk, et al, J. Electrochem. Soc. 141
11(1994)
(2) S. Sugahara et al, To be published in Applied Surface Science
Search
TMS Specialty Meetings Page
TMS Meetings Page
About TMS
TMS OnLine