JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 26, Number 9, September 1997 This Month Featuring: Proceedings of the symposium on Evolution and Advanced Characterization of Thin Film Microstructures from the 1997 TMS Annual Meeting, Orlando, Florida, February 9-13. View September 1997 Abstracts.

SPECIAL ISSUE PAPERS

Molecular View of Diamond CVD Growth [pp. 960-965]
C.C. Battaile, D.J. Srolovitz, and J.E. Butler

Surface and Interface Stress Effects on the Growth of Thin Films [pp. 966-968]
R.C. Cammarata

Real-Time Stress Evolution During Si_1-xGe_x Heteroepitaxy: Dislocations, Islanding, and Segregation [pp. 969-979]
J.A. Floro, E. Chason, S.R. Lee, R.D. Twesten, R.Q. Hwang, and L.B. Freund

Adhesion of CVD TiN on 316L Surgical Stainless Steel Obtained in a Mass Transfer Regime [pp. 980-986]
M.H. Staia, E.S. Puchi, and C. Julia Schmutz

Some Further Microstructural Characteristics of Face-Centered Cubic Polycrystalline Metal Thin Films [pp. 987-995]
Varun V. Singh, Alexander H. King, and Girish Dixit

Local Textures and Grain Boundaries in Voided Copper Interconnects [pp. 996-1001]
R.R. Keller, J.A. Nucci, and D.P. Field

Elastic Modulus Measurement of Thin Film Using a Dynamic Method [pp.1002-1008]
Youngman Kim

Evolution of Grain Structure in Thin Film Reactions [pp. 1009-1020]
K. Barmak, J.M. Rickman, and C. Michaelsen

Stress Relaxation and Thermal Evolution of Film Properties in Amorphous Carbon [pp. 1021-1029]
J.P. Sullivan, T.A. Friedmann, and A.G. Baca

Glancing-Angle Ion Bombardment for Modification and Monitoring of Semiconductor Surfaces [pp. 1030-1038]
J.G.C. Labanda and S.A. Barnett

Mechanisms of Strain Induced Roughening and Dislocation Multiplication in Si_xGe_1-x Thin Films [pp. 1039-1047]
D.E. Jesson, K.M. Chen, S.J. Pennycook, T. Thundat, and R.J. Warmack

Spontaneous Lateral Composition Modulation in AlAs/InAs Short Period Superlattices Via the Growth Front [pp. 1048-1052]
J. Mirecki Millunchick, R.D. Twesten, S.R. Lee, D.M. Follstaedt, E.D. Jones, S. P. Ahrenkiel, Y. Zhang, H.M. Cheong, and A. Mascarenhas

Structural Stability of Low Temperature Grown InGaAs/GaAs Hetrostructure [pp. 1053-1057]
Chanro Park, C.G. Park, Chae-Deok Lee, and S.K. Noh

Fatigue-Creep Crack Propagation Path in Solder Joints Under Thermal Cycling [pp. 1058-1064]
D.R. Liu and Yi-Hsin Pao

Analysis of Iodine Incorporation in MBE Grown CdTe and HgCdTe [pp. 1065-1069]
A. Parikh, S.D. Pearson, B.K. Wagner, and C.J. Summers

Electromigration in Aluminum/Silicon/Copper Metallization Due to the Presence of a Thin Oxide Layer [pp. 1070-1075]
K.A. Koh and S.J. Chua

Characteristics of Si₃N₄/GaAs Metal-Insulator-Semiconductor Interfaces with Coherent Si/Al_0.3Ga_0.7As Interlayers [pp. 1076-1082]
Dae-Gyu Park, Zhi Chen, and Hadis Morkoç

Continuous In Situ Growth Rate Extraction Using Pyrometric Interferometry and Laser Reflectance Measurement During Molecular Beam Epitaxy [pp. 1083-1089]
J.J. Zhou, Y. Li, P. Thompson, R. Chu, H.P. Lee, Y.C. Kao, and F.G. Celii

Crystallographic Texture of C54 Titanium Disilicide as a Function of Deep Submicron Structure Geometry [pp. 1090-1095]
V. Svilan, K.P. Rodbell, L.A. Clevenger, C. Cabral, Jr., R.A. Roy, C. Lavoie, J. Jordan-Sweet, and J.M.E. Harper