Sponsored by the Electronic Materials Committee of The Minerals, Metals & Materials Society's (TMS's) Electronic, Magnetic & Photonic Materials Division, the 39th Electronic Materials Conference will be held June 25-27, 1997, at Colorado State University, Fort Collins, Colorado. The following calendar outlines the majority of technical and social activities planned for conference participants. Additional detail is available as indicated by the linked terms.
| TUESDAY, JUNE 24, 1997 | ||
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| Registration | 3:00 pm - 8:00 pm | Art Gallery |
| WEDNESDAY, JUNE 25, 1997 | ||
| Registration | 7:30 am - 4:00 pm | West & Middle Ballroom |
| Plenary Lecture/Student Awards | 8:30 am - 9:30 am | Theater |
| Exhibit Booths | 10:00 am - 9:00 pm | West & Middle Ballroom |
| SESSIONS A THROUGH C | ||
| Session A: Wide Bandgap Surfaces and Emission | 10:00 am - 12:00 noon | Theater |
| Session B: Organic Electronic Materials | 10:00 am - 12:00 noon | Senate |
| Session C: Characterization of LT-GaAs and Composite Materials | 10:00 am - 12:00 noon | Cherokee |
| SESSIONS D THROUGH F | ||
| Session D: Wide Bandgap Nitrides: Epitaxial Growth | 1:30 pm - 5:00 pm | Theater |
| Session E: Ferroelectrics and High-Permittivity Oxides for Devices | 1:30 pm - 5:00 pm | Senate |
| Session F: Characterization and Applications of LT-GaAs | 1:30 pm - 5:00 pm | Cherokee |
| SESSIONS G THROUGH I | ||
| Session G: Defects, Defect Engineering and Device Reliability | 1:30 pm - 5:00 pm | Room: 214-16 |
| Session H: Si-Ge and SiGeC Growth, Processing and Characterization | 1:30 pm - 5:00 pm | Room: 203-05 |
| Session I: Quantum Electronic Materials: Dots | 1:30 pm - 5:00 pm | Room: A101, Clark Bldg. |
| Welcoming Reception | 7:00 pm - 9:00 pm | West & Middle Ballroom |
| THURSDAY, JUNE 26, 1997 | ||
| Registration | 7:30 am - 4:00 pm | West & Middle Ballroom |
| SESSIONS J THROUGH L | ||
| Session J: Quantum Effect Materials: Dots and Wires | 8:20 am - 12:00 noon | Theater |
| Session K: Non-Destructive Testing and "In Situ" Monitoring | 8:20 am - 12:00 noon | Senate |
| Session L: Electronic Transport in Oxide Thin Films | 8:20 am - 12:00 noon | Cherokee |
| SESSIONS M THROUGH O | ||
| Session M: SiC Devices and Processing | 8:20 am - 12:00 noon | Room: 230 |
| Session N: Wide Bandgap Nitrides: Characterization | 8:20 am - 12:00 noon | Room: East |
| Session O: Epitaxy For Devices | 8:20 am - 12:00 noon | Room: 214-16 |
| Exhibit Booths | 10:00 am - 5:00 pm | West & Middle Ballroom |
| SESSIONS P THROUGH R | ||
| Session P: Optical Properties of Quantum Structures | 1:30 pm - 5:00 pm | Theater |
| Session Q: Photovoltaics | 1:30 pm - 5:00 pm | Senate |
| Session R: Compound Semiconductor Oxides | 1:30 pm - 5:00 pm | Cherokee |
| SESSIONS S THROUGH U | ||
| Session S: Bulk and Epitaxial Growth of SiC | 1:30 pm - 5:00 pm | Room: 230 |
| Session T: Novel Nitride Materials | 1:30 pm - 5:00 pm | Room: East |
| Session U: Epitaxy | 1:30 pm - 5:00 pm | Room: 214-16 |
| FRIDAY, JUNE 27, 1997 | ||
| Registration | 7:45 am - 12:00 noon | West & Middle Ballroom |
| SESSIONS V THROUGH X | ||
| Session V: II-VI Structures: Self-assembled Quantum Dots and Heteroepitaxy | 8:20 am - 12:00 noon | Theater |
| Session W: Nanoscale Characterization and Fabrication | 8:20 am - 12:00 noon | Senate |
| Session X: Wafer Bonding and Material Integration Technology | 8:20 am - 12:00 noon | Cherokee |
| SESSIONS Y THROUGH AA | ||
| Session Y: Silicon-Based Optoelectronics | 8:20 am - 12:00 noon | Room: 230 |
| Session Z: Wide Bandgap Nitrides: Devices and Processing | 8:20 am - 12:00 noon | Room: East |
| Session AA: Infrared Materials and Devices | 8:20 am - 12:00 noon | Room: 214-16 |
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