1997 TMS Annual Meeting: Tuesday Abstracts

LOW ENERGY BEAM PROCESSES IN ELECTRONIC MATERIALS: Session II: Shallow Junction and Low Energy Implantation

Session Chairpersons: O.W. Holland, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831

2:00 pm INVITED

RECENT ADVANCES INTO UNDERSTANDING THE ROLE EXTENDED DEFECTS PLAY DURING TED: K. Jones, University of Florida, P.O. Box 116400, Gainesville, FL 32611

2:30 pm INVITED

DEFECT-ENGINEERED SHALLOW JUNCTIONS: Elaine G. Roth, O.W. Holland, Oak Ridge National Laboratory, Oak Ridge, TN 37831

3:00 pm INVITED

LOW ENERGY IMPLANTATION: A. Agarwal, Bell Laboratories, 600 Mountain Ave, Murray Hills, NJ 07974

3:30 pm BREAK

Session Chairperson: C.R. Abernathy, University of Florida, PO Box 116400, Gainesville, FL 32611

3:45 pm

EFFECT ON ION DAMAGE ON THE ELECTRICAL AND OPTICAL BEHAVIOR OF p-TYPE GaAs AND InGaP: K.N. Lee, J. Lee, J. Hong, S.J. Pearton, C.R. Abernathy, W.S. Hobson*, University of Florida, PO Box 116400, Gainesville, FL 32611; *Bell Laboratories, 600 Mountain Ave., Rm. 7-B-207, Murray Hill, NJ 07974

4:00 pm INVITED

PLASMA ASSISTED PHYSICAL VAPOR DEPOSITION OF METAL NITRIDE THIN FILMS: W.J. Meng, General Motors Research and Development Center, 30500 Mound Rd., Warren, MI 48090

4:30 pm

THE ROLE OF ION ENERGY IN DETERMINING THE STRUCTURAL AND ELECTRICAL QUALITY OF InN GROWN BY ECR AND RF-MOMBE: S.M. Donovan, J.D. Mackenzie, C.R. Abernathy, S.J. Pearton, P.C. Chow1, J. Van Hove*, University of Florida, PO Box 116400, Gainesville, FL 32611; *SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344

4:45 pm

EFFECT OF ION ENERGY ON THE OPTICAL PROPERTIES OF RARE EARTH DOPED III-NITRIDES GROWN BY RF-MOMBE: J.D. Mackenzie, S.M. Donovan, D. Salgado, L. Abbaschian, C.R. Abernathy, S.J. Pearton, U. Hommerich*, P.C. Chow**, J. Van Hove**, J. Zavada***, University of Florida, PO Box 116400, Gainesville, FL 32611; *Hampton University, **SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344; ***US Army Research Office