JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 24, Number 10, October 1995 This Month Featuring: Regular Issue Papers. View October 1995 Abstracts.

REGULAR ISSUE PAPERS

Structural Characterization of Oxide Layers Thermally Grown on 3C-SiC Films [pp. 1345-1348]
Q. Wahab, L. Hultman, M. Willander, and J.-E. Sundgren

Ion-Beam Mixed Ultra-Thin Cobalt Silicide (CoSi₂) Films by Cobalt Sputtering and Rapid Thermal Annealing [pp. 1349-1355]
S. Kal, I. Kasko, and H. Ryssel

Electron-Concentration Dependence of Absorption and Refraction in n-In_0.53Ga_0.47As Near the Band-Edge [pp. 1357-1361]
D. Hahn, O. Jaschinski, H.-H. Wehmann, A. Schlachetzki, and M. von Ortenberg

Optical Properties of Annealed, Single GaAs Quantum Wells: Cap Doping and Mask Width Dependence [pp. 1363-1368]
A.C. Crook, D.V. Forbes, and C.M. Herzinger

Ultra-Shallow Raised p⁺-n Junctions Formed by Diffusion from Selectively Deposited In-situ Doped Si_0.7Ge_0.3 [pp. 1369-1376]
Douglas T. Grider, Mehmet C. Öztürk, Stanton P. Ashburn, Jimmie J. Wortman, Gari Harris, and Dennis Maher

Experimental Determination of Tie-Lines in the Hg-Cd-Te System [pp. 1377-1380]
Hao-Chieh Liu and R.F. Brebrick

Conduction Band Offset of Strained InGaP by Quantum Well Capacitance-Voltage Profiling [pp. 1381-1386]
S.H. Park, M. Markarian, P.K.L. Yu, and P.M. Asbeck

High Performance AlAs/Ga_xIn_1-xAs Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition [pp. 1387-1390]
J.C. Yen, B.P. Keller, S.P. Denbaars, and U.K. Mishra

Investigations on Indium Phosphide Grown by Chemical Beam Epitaxy [pp. 1391-1398]
R.T.H. Rongen, M.R. Leys, P.J. Van Hall, C.M. Van Es, H. Vonk, and J.H. Wolter

Low Temperature Epitaxial Growth of Si_0.5Ge_0.5Alloy Layer on Si (100) by Ion Beam Assisted Deposition [pp. 1399-1406]
S.W. Park, J.Y. Shim, and H.K. Baik

Temperature-Dependent Minority-Carrier Lifetime Measurements of Red AlGaAs Light Emitting Diodes [pp. 1407-1412]
F.M. Steranka, D.C. Defevere, M.D. Camras, S.L. Rudaz, D.K. McElfresh, L.W. Cook, W.L. Snyder, and M.G. Craford

Sensitivity Analysis of Ion Implanted Silicon Wafers after Rapid Thermal Annealing [pp. 1413-1417]
Youn Tae Kim, Chi Hoon Jun, Jong-Tae Baek, Hyung Joun Yoo, and Sang-Koo Chung

Plastic Constraint of Large Aspect Ratio Solder Joints [pp. 1419-1423]
John P. Ranieri, Frederick S. Lauten, and Donald H. Avery

Development of a Solder Material Process to Relieve the Plastic Constraint Associated with Thin Joints [pp. 1425-1428]
Frederick S. Lauten, John P. Ranieri, and Donald H. Avery

The Rule of Cu-Sn Intermetallics in Wettability Degradation [pp. 1429-1434]
H.L. Reynolds and J.W. Morris, Jr.

Effects of Annealing in O₂ and N₂ on the Electrical Properties of Tantalum Oxide Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition [pp. 1435-1441]
Il Kim, Jong-Seok Kim, Oh-Seung Kwon, Sung-Tae Ahn, John S. Chun, and Won-Jong Lee

Development of rf Sputtered, Cu-Doped ZnTe for Use as a Contact Interface Layer to p-CdTe [pp. 1443-1449]
T.A. Gessert, A.R. Mason, R.C. Reedy, R. Matson, T.J. Coutts, and P. Sheldon

Thermodynamics and Kinetics of Hydrogen Evolution in Hydrogenated Amorphous Silicon Films [pp. 1451-1459]
Nagarajan Sridhar, D.D.L. Chung, W.A. Anderson, and J. Coleman

Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs [pp. 1461-1464]
D.C. Look, Z.-Q. Fang, and J.R. Sizelove

The Effect of Soldering Process Variables on the Microstructure and Mechanical Properties of Eutectic Sn-Ag/Cu Solder Joints [pp. 1465-1472]
Wenge Yang, Lawrence E. Felton, and Robert W. Messler, Jr.

Stress Relaxation Behavior of Eutectic Tin-Lead Solder [pp. 1473-1484]
E.W. Hare and R.G. Stang

Effects of Barrier Layer and Processing Conditions on Thin Film Cu Microstructure [pp. 1485-1492]
E.M. Zielinski, R.P. Vinci, and J.C. Bravman

Intermetallic Compound Layer Growth By Solid State Reactions Between 58Bi-42Sn Solder and Copper [pp. 1493-1505]
P.T. Vianco, A.C. Kilgo, and R. Grant

Low Temperature Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide Films Using Disilane and Nitrous Oxide [pp. 1507-1510]
Juho Song, G.S. Lee, and P.K. Ajmera

Selective Silicon Epitaxy by Photo-Chemical Vapor Deposition at a Very Low Temperature of 160°C [pp. 1511-1515]
Akira Yamada, Takayuki Oshima, Makoto Konagai, and Kiyoshi Takahashi