JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 24, Number 9, September 1995 This Month Featuring: Proceedings of the 1994 U.S. Workshop on the Physics and Chemistry of HgCdTe and Other IR Materials. View September 1995 Abstracts.

SPECIAL ISSUE PAPERS

Two-Dimensional Molecular Beam Epitaxy of {001} CdTe on Cd and Zn Terminated {001} GaAs [pp. 1041-1046]
N.K. Dhar, C.E.C. Wood, P.R. Boyd, H.K Pollehn, M. Martinka, J.D. Benson, and J.H. Dinan

Studies on the Growth of CdTe on Si Using Ge Interfacial Layer in an Organometallic Vapor Phase Epitaxial System [pp. 1047-1051]
Wen-Sheng Wang and Ishwara B. Bhat

Thermomigration of Tellurium Precipitates in CdZnTe Crystals Grown by Vertical Bridgman Method [pp. 1053-1056]
T.S. Lee, J.W. Park, Y.T. Jeoung, H.K. Kim, C.H. Chun, J.M. Kim, I.H. Park, J.M. Chang, S.U. Kim, and M.J. Park

Vertical Bridgman Techniques to Homogenize Zinc Composition of CdZnTe Substrates [pp. 1057-1059]
T.S. Lee, S.B. Lee, J.M. Kim, J.S. Kim, S.H. Suh, J.H. Song, I.H. Park, S.U. Kim, and M.J. Park

Assessment of the Purity of Cadmium and Tellurium as Components of the CdTe-Based Substrates [pp. 1061-1065]
R. Triboulet, A. Aoudia, and A. Lusson

Molecular Beam Epitaxial HgCdTe Material Characteristics and Device Performance: Reproducibility Status [pp. 1067-1076]
J. Bajaj, J.M. Arias, M. Zandian, J.G. Pasko, L.J. Kozlowski, R.E. DeWames, and W.E. Tennant

Metalorganic Chemical Vapor Deposition of HgCdTe p/n Junctions Using Arsenic and Iodine Doping [pp. 1077-1085]
P. Mitra, T.R. Schimert, F.C. Case, S.L. Barnes, M.B. Reine, R. Starr, M.H. Weiler, and M. Kestigian

Real-Time Control of HgCdTe Growth by Organometallic Vapor Phase Epitaxy Using Spectroscopic Ellipsometry [pp. 1087-1091]
Srikanteswara Dakshina Murthy, Ishwara Bhat, Blaine Johs, Shakil Pittal, and Ping He

Low Temperature Growth of (100) HgCdTe Layers with DtBTe in Metalorganic Vapor Phase Epitaxy [pp. 1093-1097]
K. Yasuda, H. Hatano, T. Ferid, K. Kawamoto, T. Maejima, and M. Minamide

The Growth and Characterization of (211) and (133) Oriented (Hg,Cd)Te Epilayers (211)B GaAs by Organometallic Vapor Phase Epitaxy [pp. 1099-1104]
G.J. Gouws and R.J. Muller

Improvement in HgCeTe Diode Characteristics by Low Temperature Post-Implantation Annealing [pp. 1105-1111]
Akira Ajisawa and Naoki Oda

Effect of Cooling Procedure After Annealing on Electrical Properties of Cd_0.2Hg_0.8Te Epitaxial Films Grown by Liquid Phase Epitaxy [pp. 1113-1117]
Z. Kawazu, S. Ochi, T. Sonoda, and S. Takamiya

Theoretical Evaluation of InTlP, InTlAs, and InTlSb As Long-Wave Infrared Detectors [pp. 1119-1120]
A. Sher, M. van Schilfgaarde, S. Krishnamurthy, M.A. Berding, and A-B Chen

Temperature Dependence of Band Gaps in HgCdTe and Other Semiconductors [pp. 1121-1125]
Srinivasan Krishnamurthy, A.-B. Chen, A. Sher, and M. van Schilfgaarde

Defect Modeling Studies in HgCdTe and CdTe [pp. 1127-1135]
M.A. Berding, A. Sher, and M. van Schilfgaarde

Process Simulation for HgCdTe Infrared Focal Plane Array Flexible Manufacturing [pp. 1137-1142]
C.R. Helms, J.L. Meléndez, H.G. Robinson, S. Holander, J. Hasan, and S. Halepete

Effect of Dislocations on 1/f Noise of Long Wavelength Infrared Photodiodes Fabricated with HgCdTe Layers Grown on GaAs by Metalorganic Vapor Phase Epitaxy [pp. 1143-1147]
S. Murakami, H. Nishino, H. Ebe, and Y. Nishijima

The Role of Surface Adsorbates in the Metalorganic Vapor Phase Epitaxial Growth of (HgCd)Te onto (100) GaAs Substrates [pp. 1149-1153]
J. Giess, J.E. Hails, A. Graham, G. Blackmore, M.R. Houlton, J. Newey, M.L. Young, M.G. Astles, W. Bell, and D.J. Cole-Hamilton

Reaction Chemistry and Resulting Surface Structure of HgCdTe Etched in CH₄/H₂ and H₂ ECR Plasmas [pp. 1155-1160]
Robert C. Keller, M. Seelmann-Eggebert, and H.J. Richter

The Interface of Metalorganic Chemical Vapor Deposition-CdTe/HgCdTe [pp. 1161-1168]
Y. Nemirovsky, N. Amir, D. Goren, G. Asa, N. Mainzer, and E. Weiss

Electrical and Structural Properties of Epitaxial CdTe/HgCdTe Interfaces [pp. 1169-1174]
V. Ariel, V. Garber, D. Rosenfeld, G. Bahir, V. Richter, N. Mainzer, and A. Sher

Characterization of CdTe for HgCdTe Surface Passivation [pp. 1175-1182]
L.O. Bubulac, W.E. Tennant, J. Bajaj, J. Sheng, R. Brigham, A.H.B. Vanderwyck, M. Zandian, and W.V. McLevige

Bake Stability of Long-Wavelength Infrared HgCdTe Photodiodes [pp. 1183-1187]
A. Mestechkin, D.L. Lee, B.T. Cunningham, and B.D. MacLeod

The Relationship Between Lattice Matching and Crosshatch in Liquid Phase Epitaxy HgCdTe on CdZnTe Substrates [pp. 1189-1199]
S.P. Tobin, F.T.J. Smith, P.W. Norton, J. Wu, M. Dudley, D. DiMarzio, and L.G. Casagrande

Electron Cyclotron Resonance Plasma Etching of HgTe-CdTe Superlattices Grown by Photo-Assisted Molecular Beam Epitaxy [pp. 1201-1206]
K.A. Harris, D.W. Endres, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger, T.H. Myers, A.N. Klymachyov, C.M. Vitrus, and N.S. Dalal

Origin of Void Defects in Hg_1-xCd_xTe Grown by Molecular Beam Epitaxy [pp. 1207-1210]
M. Zandian, J.M. Arias, J. Bajaj, J.G. Pasko, L.O. Bubulac, and R.E. DeWames

Analysis of Low Doping Limitation in Molecular Beam Epitaxially Grown HgCdTe(211)B Epitaxial Layers [pp. 1211-1218]
P.S. Wijewarnasuriya, M.D. Lange, S. Sivananthan, and J.P. Faurie

Compositional Dependence of Cation Impurity Gettering in Hg_1-xCd_xTe [pp. 1219-1224]
José L. Meléndez, John Tregilgas, John Dodge, and C.R. Helms

A Comparison of the Diffuion of Iodine into CdTe, Hg_0.8Cd_0.2Te and Zn_0.05Cd_0.95Te [pp. 1225-1229]
E.D. Jones, J. Malzbender, N. Shaw, P. Capper, and J.B. Mullin

HgCdTe and Other Infrared Material Status in the Ukraine [pp. 1231-1238]
V.K. Malyutenko

Numerical Simulation of HgCdTe Detector Characteristics [pp. 1239-1248]
G.M. Williams and R.E. DeWames

The Magnetic Field Dependence of R0A Products in n-on-p Homojunctions and p-on-n Heterojunctions from Hg_0.78Cd_0.22Te Liquid Phase Epitaxy Films [pp. 1249-1253]
M.C. Chen, A. Turner, L. Colombo, and D. Chandra

Magneto-Transport Characterization Using Quantitative Mobility-Spectrum Analysis [pp. 1255-1262]
J. Antoszewski, D.J. Seymour, L. Faraone, J.R. Meyer, and C.A. Hoffman

Characterization of Molecular Beam Epitaxially Grown HgCdTe Epilayers by Mid-Infrared Interband Magneto-Absorption [pp. 1263-1268]
P. Helgesen, R. Sizmann, T. Skauli, T. Colin, H. Steen, and S. Løvold

Photoluminescence and Raman Studies of High Quality CdTe:I Epilayers [pp. 1269-1273]
N.C. Giles, Jaesun Lee, T.K. Tran, J.W. Tomm, and C.J. Summers

Status of Te-Rich and Hg-Rich Liquid Phase Epitaxial Technologies for the Growth of (Hg,Cd)Te Alloys [pp. 1275-1285]
H.R. Vydyanath

Te-Rich Liquid Phase Epitaxial Growth of HgCdTe on Si-Based Substrates [pp. 1287-1292]
F.T. Smith, P.W. Norton, P. LoVecchio, N. Hartle, M. Weiler, N.H. Karam, S. Sivananthan, and Y.P. Chen

Piezoelectric Effects in HgCdTe Devices [pp. 1293-1297]
C.F. Wan, J.D. Luttmer, R.S. List, and R.L. Strong

1/f Noise and Material Defects in HgCdTe Diodes [pp. 1299-1303]
R. Schiebel, D. Bartholomew, M. Bevan, R.S. List, and M. Ohlson

Characterization of Liquid-Phase Epitaxially Grown HgCdTe Films by Magnetoresistance Measurements [pp. 1305-1309]
J.S. Kim, D.G. Seiler, L. Colombo, and M.C. Chen

Nondestructive Characterization of Hg_1-xCd_xTe Layers with n-p Structures by Magneto-Thermoelectric Measurements [pp. 1311-1319]
J. Baars, D. Brink, C.L. Littler, and M. Bruder

Compositionally Graded HgCdTe Photodiodes: Prediction of Spectral Response From Transmission Spectrum and the Impact of Grading [pp. 1321-1328]
D. Rosenfeld, V. Garber, V. Ariel, and G. Bahir

Effect of a Valence-Band Barrier on the Quantum Efficiency and Background-Limited Dynamic Resistance of Compositionally Graded HgCdTe P-on-n Heterojunction Photodiodes [pp. 1329-1339]
M.H. Weiler and M.B. Reine