JOURNAL OF ELECTRONIC MATERIALS | |
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Volume 26, Number 5, May 1997 This Month Featuring: Review Paper, Regular Issue Papers, and Letter. View May 1997 Abstracts.
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Dry Etching of III-V Semiconductors in IBr/Ar Electron Cyclotron Resonance Plasmas [pp. 429-435]
J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson, and
F. Ren
Laser-Induced Direct Etching of GaAs Using Chlorofluorocarbon (CFC) Alternative Gases [pp. 436-439]
Moo-Sung Kim, Cheon Lee, Se Ki Park, Won Chel Choi, Eun Kyu Kim, Seong-Il Kim,
Byoung Sung Ahn, and Suk-ki Min
Nearly Room-Temperature Type-II Quantum-Well Lasers at 3-4 µm [pp. 440-443]
Chih-Hsiang Lin, P.C. Chang, S.J. Murry, D. Zhang, Rui Q. Yang, S.S. Pei, J.I.
Malin, J.R. Meyer, C.L. Felix, J.R. Lindle, L. Goldberg, C.A. Hoffman, and E.J. Bartoli
LPE Growth of Crack-Free PbSe Layers on Si(100) Using MBE-Grown PbSe/BaF2CaF2 Buffer Layers [pp. 444-448]
B.N. Strecker, P.J. McCann, X.M. Fang, R.J. Hauenstein, M. O'Steen, and M.B.
Johnson
Structural, Electrical, and Optical Studies of GaAs Implanted with MeV As or Ga Ions [pp. 449-458]
J. Jasinski, Z. Liliental-Weber, J. Washburn, H.H. Tan, C. Jagadish, A.
Krotkus, S. Marcinkevicius, and M. Kaminska
Chemical Composition and Thermal Stability of 2 Butyl, 5 Chloro, Benzimidazole Film [pp. 459-462]
V. Sirtori, L. Lombardi, and G. Redaelli
Defect Characterization of n-Type Si1-xGex After 1.0 keV Helium-Ion Etching [pp. 463-469]
S.A. Goodman, F.D. Auret, K. Nauka, and J.B. Malherbe
Thermally Stimulated Current Measurements on a UV Irradiated Organic Photoreceptor Layer [pp. 470-473]
D.P. Webb, Y.C. Chan, C.K.H. Wong, Y.W. Lam, K.M. Leung, and D.S. Chiu
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