JOURNAL OF ELECTRONIC MATERIALS
TABLE OF CONTENTS
Volume 26, Number 5, May 1997

This Month Featuring: Review Paper, Regular Issue Papers, and Letter. View May 1997 Abstracts.

REVIEW PAPER

Permanent-Magnet Materials: Research Directions and Opportunities [pp. 415-422]
R.H. Richman and W.P. McNaughton

REGULAR ISSUE PAPERS

Surface Treatment of ZnSe Substrate and Homoepitaxy of ZnSe [pp. 423-428]
M.W. Cho, K.W. Koh, K. Morikawa, K. Arai, H.D. Jung, Z. Zhu, T. Yao, and Y. Okada

Dry Etching of III-V Semiconductors in IBr/Ar Electron Cyclotron Resonance Plasmas [pp. 429-435]
J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson, and F. Ren

Laser-Induced Direct Etching of GaAs Using Chlorofluorocarbon (CFC) Alternative Gases [pp. 436-439]
Moo-Sung Kim, Cheon Lee, Se Ki Park, Won Chel Choi, Eun Kyu Kim, Seong-Il Kim, Byoung Sung Ahn, and Suk-ki Min

Nearly Room-Temperature Type-II Quantum-Well Lasers at 3-4 µm [pp. 440-443]
Chih-Hsiang Lin, P.C. Chang, S.J. Murry, D. Zhang, Rui Q. Yang, S.S. Pei, J.I. Malin, J.R. Meyer, C.L. Felix, J.R. Lindle, L. Goldberg, C.A. Hoffman, and E.J. Bartoli

LPE Growth of Crack-Free PbSe Layers on Si(100) Using MBE-Grown PbSe/BaF2CaF2 Buffer Layers [pp. 444-448]
B.N. Strecker, P.J. McCann, X.M. Fang, R.J. Hauenstein, M. O'Steen, and M.B. Johnson

Structural, Electrical, and Optical Studies of GaAs Implanted with MeV As or Ga Ions [pp. 449-458]
J. Jasinski, Z. Liliental-Weber, J. Washburn, H.H. Tan, C. Jagadish, A. Krotkus, S. Marcinkevicius, and M. Kaminska

Chemical Composition and Thermal Stability of 2 Butyl, 5 Chloro, Benzimidazole Film [pp. 459-462]
V. Sirtori, L. Lombardi, and G. Redaelli

Defect Characterization of n-Type Si1-xGex After 1.0 keV Helium-Ion Etching [pp. 463-469]
S.A. Goodman, F.D. Auret, K. Nauka, and J.B. Malherbe

Thermally Stimulated Current Measurements on a UV Irradiated Organic Photoreceptor Layer [pp. 470-473]
D.P. Webb, Y.C. Chan, C.K.H. Wong, Y.W. Lam, K.M. Leung, and D.S. Chiu

LETTER

Improved Reproducibility of AlGaInAs Laser Threshold by InP Substrate Deoxidation under Phosphorous Flux [pp. L9-L12]
J.C. Harmand, E. Idiart-Alhor, J.M. Moison, and F. Barthe

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