JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 25, Number 9, September 1996 This Month Featuring: Regular Issue Papers . View September 1996 Abstracts.

REGULAR ISSUE PAPERS

The Structural, Optical, and Electrical Properties of Vacuum Evaporated Cu-Doped ZnTe Polycrystalline Thin Films [pp. 1422-1427]
L. Feng, D. Mao, J. Tang, R.T. Collins, and J.U. Trefny

Dry Etching of InGaAlP Alloys in Cl₂/Ar High Ion Density Plasmas [pp. 1428-1433]
J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, C.J. Santana, S.J. Pearton, W.S.Hobson, and F. Ren

Low-Pressure Pyrolysis Studies of a New Phosphorous Precursor: Tertiarybutylbis(dimethylamino)phosphine [pp. 1434-1438]
C.W. Hill, R.W. Gedridge, Jr., T.J. Groshens, G.B. Stringfellow, and L.P. Sadwick

Phase Equilibria in InAsSbP Quaternary Alloys Grown by Liquid Phase Epitaxy [pp. 1439-1445]
M.R. Wilson, A. Krier, and Y. Mao

Fabrication of Dry-Etched Mirrors in GaAs-Based and InP-Based Lasers Using Chemically Assisted Ion-Beam Etching at Low Temperatures [pp. 1446-1450]
R.E. Sah, J.D. Ralston, J. Daleiden, E.C. Larkins, S. Weisser, J. Fleissner, and W. Benz

The Modification of Electrophotographic and Mechanical Properties of Organic Photoconductors by Ultra-Violet Irradiation [pp. 1451-1457]
C.K.H. Wong, Y.C. Chan, Y.W. Lam, D.P. Webb, K.M. Leung, and D.S. Chiu

Photoluminescence and Raman Scattering Characterization of Silicon-Doped In_0.52Al_0.48As Grown on InP (100) Substrates by Molecular Beam Epitaxy [pp. 1458-1462]
S.F. Yoon, Y.B. Miao, K. Radhakrishnan, and S. Swaminathan

Al-Ga-As-Dopant Phase-Equilibria for Liquid Phase Epitaxy [pp.1463-1468]
C. Algora and M.A. Martínez

Incorporation of Group V Elements in Ga_xIn_1-xAs_yP_1-y Grown by Gas Source Molecular Beam Epitaxy [pp. 1469-1473]
Tsuen-Lin Lee, Jin-Shung Liu, and Hao-Hsiung Lin

Formation of Ohmic Contacts to p-ZnTe [pp. 1474-1477]
J.T. Trexler, J.J. Fijol, L.C. Calhoun, R.M. Park, and P.H. Holloway

Microstructural Analysis of a Au/Pt/Pd/Zn Ohmic Contact to an AlGaAs/GaAs Heterojunction Bipolar Transistor [pp. 1478-1486]
P. Jian, D.G. Ivey, S. Eicher, and T.P. Lester

The Scaling of CVD Rotating Disk Reactors to Large Sizes and Comparison with Theory [pp. 1487-1494]
Alan G. Thompson, R.A. Stall, P. Zawadzki, and G.H. Evans

Heterojunction Diodes in 3C-SiC/Si System Grown by Reactive Magnetron Sputtering: Effects of Growth Temperature on Diode Rectification and Breakdown [pp. 1495-1500]
Q. Wahab, M. Karlsteen, O. Nur, L. Hultman, M. Willander, and J.-E. Sundgren

Efficient 2.0-2.6 µm Wavelength Photoluminescence from Narrow Bandgap InAsP/InGaAs Double Heterostructures Grown on InP Substrates [pp. 1501-1505]
D. Garbuzov, D.-S. Kim, S.R. Forrest, R. Menna, M. Lange, G.H. Olsen, and M. Cohen

Comparative Measurements of the Electron Emission Behavior of Si₃N₄-InGaAs Interfaces Prepared by Remote and Direct PECVD [pp. 1506-1513]
P.J.M. Parmiter and J.G. Swanson

Growth, Characterization and Modeling of In_xGa_1-xP Stripes by Selective-Area MOCVD [pp. 1514-1520]
J.F. Kluender, A.M. Jones, R.M. Lammert, J.E. Baker, and J.J. Coleman

Phase Modulated Ellipsometry Used for Composition Control during MBE Growth of CdHgTe: An Analysis of Instrumental Factors and an Assessment of the Material Produced [pp. 1521-1526]
R.H. Hartley, M.A. Folkard, D. Carr, P.J. Orders, G. Shen, V. Kumar, T.A. Steele, I.K. Varga, B.A. Johnson, K. Fueloop, P. Capper, D. Dutton, S. Barton, I. Gale, and F. Grainger

Extremely Strong and Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped GaAs, AlGaAs and AlGaAs/GaAs Single Quantum Wells [pp. 1527-1530]
Toshiki Makimoto and Naoki Kobayashi

Film Morphology and Reaction Rate for the CVD of Tungsten by the WF₆-SiH₄ Reaction [pp. 1531-1538]
O.H. Gokce, J.T. Sears, and T. Sahin

Co-Pyrolysis of DIPSbH and TMIn [pp. 1539-1544]
Y.S. Chun, G.B. Stringfellow, and R.W. Gedridge, Jr.

Structural Characterization of Bulk GaN Crystals Grown Under High Hydrostatic Pressure [pp. 1545-1550]
Zuzanna Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, and S. Porowski

Optimization of the Spacer Layer Thickness in AlInAs/InGaAs/InP MODFETs [pp. 1551-1553]
Matthew L. Seaford, Glenn Martin, L.F. Eastman, Dave Hartzell, and Scott Massie

Mass Spectroscopy Study of GaN Metalorganic Chemical Vapor Deposition [pp. 1554-1560]
Y. Park and D. Pavlidis

A Model of the Interdiffused Multilayer Process [pp. 1561-1572]
Spyros A. Svoronos, Wilbur W. Woo, Stuart J.C. Irvine, Haluk O. Sankur, and Jagmohan Bajaj