JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 25, Number 5, May 1996 This Month Featuring: Proceedings of the symposium on III-V Nitrides and Silicon from the 1995 Electronic Materials Conference, Charlottesville, Virginia, June 21-23. View May 1996 Abstracts.

SPECIAL ISSUE PAPERS

Electron Mobility in Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures and in Bulk GaN [pp. 777-785]
M. Shur, B. Gelmont, and M. Asif Khan

Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001) GaAs by RHEED [pp. 787-791]]
Hui Yang, Oliver Brandt, and Klaus Ploog

MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates [pp. 793-797]
M.A.L. Johnson, Shizuo Fujita, W.H. Rowland, Jr., W.C. Hughes, Y.W. He, N.A. El-Masry, J.W. Cook, Jr., J.F. Schetzina, J. Ren, and J.A. Edmond

Residual Impurities in GaN/Al₂O₃ Grown by Metalorganic Vapor Phase Epitaxy [pp. 799-803]
Akihiko Ishibashi, Hidemi Takeishi, Masaya Mannoh, Yasufumi Yabuuchi, and Yuzaburoh Ban

Cleaning of GaN Surfaces [pp. 805-810]
L.L. Smith S.W. King, R.J. Nemanich, and R.F. Davis

Estimated Phase Equilibria in the Transition Metal-Ga-N Systems: Consequences for Electrical Contacts to GaN [pp. 811-818]
S.E. Mohney and X. Lin

Ohmic Contacts to n-Type GaN Using Pd/Al Metallization [pp. 819-824]
A.T. Ping, M. Asif Khan, and I. Adesida

Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H₂/Cl₂ [pp. 825-829]
A.T. Ping, A.C. Schmitz, M. Asif Khan, and I. Adesida

Schottky Barriers on n-GaN Grown on SiC [pp. 831-834]
E.V. Kalinina, N.I. Kuznetsov, V.A. Dmitriev, K.G. Irvine, and C.H. Carter, Jr.

Reactive Ion Etching of Gallium Nitride Films [pp. 835-837]
Heon Lee, David B. Oberman, and James S. Harris, Jr.

Ion Implantation and Rapid Thermal Processing of III-V Nitrides [pp. 839-844]
J.C. Zolper, M. Hagerott Crawford, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, C. Yuan, and R.A. Stall

The Incorporation of Hydrogen into III-V Nitrides During Processing [pp. 845-849]
S.J. Pearton, R.J. Shul, R.G. Wilson, F. Ren, J.M. Zavada, C.R. Abernathy, C.B. Vartuli, J.W. Lee, J.R. Mileham, and J.D. Mackenzie

Magnetic Resonance Studies of GaN Based Light Emitting Diodes [pp. 851-854]
W.E. Carlos, E.R. Glaser, T.A. Kennedy, and S. Nakamura

MBE Growth and Properties of ZnO on Sapphire and SiC Substrates [pp. 855-862]
M.A.L. Johnson, Shizuo Fujita, W.H. Rowland, Jr., W.C. Hughes, J.W. Cook, Jr., and J.F. Schetzina

Electronic Properties of Boron in p-Type Bulk 6H-SiC [pp. 863-867]
W.C. Mitchel, Matthew Roth, A.O. Evwaraye, P.W. Yu, and S.R. Smith

Effect of Annealing Temperature on 1.5 µm Photoluminescence from Er-Implanted 6H-SiC [pp. 869-873]
A.J. Steckl, J. Devrajan, W.J. Choyke, R.P. Devaty, M. Yoganathan, and S.W. Novak

Reactive Ion Etching of Trenches in 6H-SiC [pp. 875-878]
M. Kothandaraman, D. Alok, and B.J. Baliga

Aluminum and Boron Ion Implantations into 6H-SiC Epilayers [pp. 879-884]
Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, Toshitake Nakata, and Masanori Watanabe

Elevated Temperature Nitrogen Implants in 6H-SiC [pp. 885-892]
Jason Gardner, Mulpuri V. Rao, O.W. Holland, G. Kelner, David S. Simons, Peter H. Chi, John M. Andrews, J. Kretchmer, and M. Ghezzo

High Field Activation of Micropipes in High Resistivity Silicon Carbide [pp. 893-898]
T.S. Sudarshan, G. Gradinaru, G. Korony, W. Mitchel, and R.H. Hopkins

Experimental Characterization of Electron-Hole Generation in Silicon Carbide [pp. 899-907]
Y. Wang, J.A. Cooper, Jr., M.R. Melloch, S.T. Sheppard, J.W. Palmour, and L.A. Lipkin

Improved Oxidation Procedures for Reduced SiO₂/SiC Defects [pp. 909-915]
L.A. Lipkin and J.W. Palmour

Structural, Optical, and Surface Science Studies of 4H-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition [pp. 917-923]
Z.C. Feng, A. Rohatgi, C.C. Tin, R. Hu, A.T.S. Wee, and K.P. Se