JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 25, Number 2, February 1996 This Month Featuring: Proceedings of the symposium on II-VI Heterostructures for Short Wavelength Emitters from the 1995 Electronic Materials Conference, Charlottesville, Virginia, June 21-23. View February 1996 Abstracts.

SPECIAL ISSUE PAPERS

New Mechanism of Excitonic Enhanced Optical Gain for Wide-Gap Quantum Wells [pp. 173-176]
T. Uenoyama

Carrier Dynamics Study of Cd_xZn_1-xSe/ZnSe (x = 0.2) Multiple Quantum Wells [pp. 177-181]
L. Wang, J.H. Simmons, M.H. Jeon, R.M. Park, and C.J. Stanton

Optical Properties and Thermal Transport of Carriers in (Zn,Cd)Se-ZnSe Heterostructures [pp. 183-193]
L. Aigouy, B. Gil, O. Briot, T. Cloitre, N. Briot, R.L. Aulombard, and M. Averous

Formation of a Thin III-VI Compound Interfacial Layer at ZnTe/ZnSe Heterojunction and Its Effect on Energy Band Discontinuity [pp. 195-199]
T. Yoshida, T. Nagatake, M. Kobayashi, and A. Yoshikawa

Metal-Semiconductor Contacts to n-ZnS_0.07Se_0.93 [pp. 201-205]
Albert Wang and Wayne A. Anderson

Role of Cadmium in Enhancing Optical Properties and Chlorine Doping of Photo-Assisted OMVPE-Grown ZnSe [pp. 207-212]
M.R. Gokhale, K.X. Boa, P.D. Healey, F.C. Jain, and J.E. Ayers

Structural Study of Degraded ZnMgSSe Blue Light Emitters [pp. 213-216]
K. Nakano, S. Tomiya, M. Ukita, H. Yoshida, S. Itoh, E. Morita, M. Ikeda, and A. Ishibashi

Effects of GaAs Buffer Layer and Lattice-Matching on Deep Levels in Zn(S)Se/GaAs Heterostructures [pp. 217-222]
Mitsuru Funato, Hiroaki Kitani, Shizuo Fujita, and Shigeo Fujita

Growth of P-Type ZnSe by Metalorganic Molecular Beam Epitaxy Using Metal Zn and Dimethylselenide [pp. 223-227]
Jun Suda, Masanori Tsuka, Daisuke Honda, Mitsuru Funato, Yoichi Kawakami, Shizuo Fujita, and Shigeo Fujita

DX Centers in II-VI Semiconductors and Heterojunctions [pp. 229-233]
Tineke Thio, J.W. Bennett, D.J. Chadi, R.A. Linke, and M.C. Tamargo

Nondestructive Analysis of Structural Defects in Wide Bandgap II-VI Heterostructures [pp. 235-238]
M.S. Goorsky, S.E. Lindo, S. Guha, and G.M. Haugen

Observation of [100] and [010] Dark Line Defects in Optically Degraded ZnSSe-Based LEDs by Transmission Electron Microscopy [pp. 239-243]
L. Salamanca-Riba and J.H. Kuo

Effect of GaAs Surface Pretreatment on Electrical Properties of MBE-ZnSe/GaAs Substrate Interfaces [pp. 245-251]
Takayuki Sawada, Yuji Yamagata, Kazuaki Imai, and Kazuhiko Suzuki

Observation of the Quantum Confined Stark Effect in ZnSe/ZnCdSe Single Quantum Well Systems [pp. 253-257]
S.W. Short, S.H. Xin, A. Yin, H. Luo, M. Dobrowolska, and J.K. Furdyna

MBE Growth of Lattice-Matched ZnCdMgSe Quaternaries and ZnCdMgSe/ZnCdSe Quantum Wells on InP Substrates [pp. 259-262]
Maria C. Tamargo, Abdullah Cavus, Linfei Zeng, Ning Dai, Neil Bambha, A. Gray, Fred Semendy, Wocjiech Krystek, and Fred H. Pollak

Study on Stacking Faults and Microtwins in Wide Bandgap II-VI Semiconductor Heterostructures Grown on GaAs [pp. 263-267]
G.C. Hua, D.C. Grillo, T.B. Ng, C.C. Chu, J. Han, R.L. Gunshor, and A.V. Nurmikko

REGULAR ISSUE PAPERS

Elastic Strain and Enhanced Light Emission in Dry Etched Si/Si_1-xGe_x Quantum Dots [pp. 287-291]
Y.S. Tang, C.M. Sotomayor Torres, S. Nilsson, B. Dietrich, W. Kissinger, T.E. Whall, E.H.C. Parker, W.-X. Ni, G.V. Hansson, H. Presting, and H. Kibbel

Effect of Current Reversal on the Failure Mechanism of Al-Cu-Si Narrow Interconnects [pp. 293-296]
Choong-Un Kim, S.H. Kang, and J.W. Morris, Jr.

Optical Properties of Ge_1-yC_y Alloys [pp. 297-300]
B.A. Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R.G. Wilson, P.R. Berger, and J. Kolodzey

Quantative Scanning Capacitance Microscopy Analysis of Two-Dimensional Dopant Concentrations at Nanoscale Dimensions [pp. 301-304]
A. Erickson, L. Sadwick, G. Neubauer, J. Kopanski, D. Adderton, and M. Rogers

(111)B-oriented AlAs/GaAs/AlAs Double Barrier Resonant Tunneling Devices Grown in a Gas Source Molecular Beam Epitaxy System [pp. 305-308]
L. Cong, F. Williamson, and M.I. Nathan

Effect of Growth Temperature on Performance of AlGaAs/InGaAs/GaAs QW Laser Diodes [pp. 309-312]
F. Bugge, G. Erbert, M. Procop, I. Rechenberg, U. Zeimer, and M. Weyers

Characterization of Surface Roughness Anisotropy on Mismatched InAlAs/InP Heterostructures [pp. 313-319]
M.T. Sinn, J.A. del Alamo, B.R. Bennett, K. Haberman, and F.G. Celii

On the Thermally Stimulated Conductivity with Small Recapture Rate and Temperature Dependent Caprutes Cross Sections [pp. 321-323]
S. Dorendrajit Singh, E. Dwijamani Singh, R.K. Gartia, and P.S. Mazumdar