JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 23, Number 12, December 1994 This Month Featuring: Regular Issue Papers, Review Section, and Indexes.

REGULAR ISSUE PAPERS

Thickness-Scaling of Sputtered PZT Films in the 200 nm Range for Memory Applications [pp. 1261-1268]
C. Sudhama, J. Kim, R. Khamankar, V. Chikarmane, and J.C. Lee

Metalorganic Chemical Vapor Deposition Growth of GaAs:Er Using Er(C₄H₉C₅H₄)₃ [pp. 1269-1272]
X.M. Fang, Y. Li, D.W. Langer, and J.S. Solomon

Characteristics of the NO Dielectric Film with Low Pressure Chemical Vapor Deposition In-Situ Nitridation [pp. 1273-1278]
K.H. Kim, D.H. Ko, S.H. Kang, S.T. Kim, S.J. Shim, E.S. Kim, and S.T. Ahn

Evaluation of PZT Thin Films on Ag Coated Si Substrates [pp. 1279-1284]
H.-X Zhang, P. Karjalainen, A. Uusimäki and S. Leppävuori

Experimental Studies of Metal/InP Interfaces Formed at Room Temperature and 77K [pp. 1285-1290]
L. He, Z.Q. Shi, and W.A. Anderson

Interfaces of InAsP/InP Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy [pp. 1291-1296]
C.A. Tran, J.T. Graham, J.L. Brebner, and R.A. Masut

Galvanomagnetic Properties of Two-Dimensional Electron Gases in Strain Relaxed In_xGa_1-xAs (x<0.40) Heterostructures Grown by Molecular Beam Epitaxy on GaAs Substrates [pp. 1297-1302]
J.M. Fernández, J. Chen, and H.H. Wieder

Photoluminescence Evaluation of Pseudomorphic High Electron Mobility Transistor Device Wafers [pp. 1303-1308]
P.A. Martin, J.M. Ballingall, P. Ho, and T.J. Rogers

Three-Dimensional Simulation of Impurity Diffusion in Thin-Film Diffusion Barriers [pp. 1309-1314]
X. Gui, S.K Dew, and M.J. Brett

A New Precipitate Phase in Al-4wt.% Cu Thin-Film Interconnects [pp. 1315-1324]
W.C. Shih and A.L. Greer

Mathematical Modeling of Alternative Pad Designs in Flip-Chip Soldering Processes [pp. 1325-1334]
S.E. Deering and J. Szekely

The Interactions Between Si/Co Films and GaAs(001) Substrates [pp. 1335-1342]
J.S. Kwak, H.K Baik, D.W. Shin, C.G. Park, C.S. Kim, S.K Noh, and S.I. Kim

Investigation of DX Centers in Modulation-Doped Field-Effect Transistor-Type Al_0.3Ga_0.7As/GaAs Heterostructures Using a Fourier-Transform Deep Level Transient Spectroscopy System [pp. 1343-1348]
Y. Haddab, M.A. Py, H.J. Bühlmann, and M. Ilegems

Precipitation in CdTe Crystals Studied Through Mie Scatttering [pp. 1349-1358]
R.D.S. Yadava, B.S. Sundersheshu, M. Anandan, R.K Bagai, and W.N. Borle

REVIEW SECTION

INDEXES