JEM Table of Contents: October 1994

JOURNAL OF ELECTRONIC MATERIALS

TABLE OF CONTENTS Volume 23, Number 10, October 1994 This Month Featuring: Special Issue on the Development of Microstructure in Deposited Thin Films, Regular Issue Papers, and Letters Section.

TABLE OF CONTENTS
Volume 23, Number 10, October 1994

This Month Featuring: Special Issue on the Development of Microstructure in Deposited Thin Films, Regular Issue Papers, and Letters Section.

SPECIAL ISSUE PAPERS

Foreword [p. 997]
Krishna Rajan, David B. Knorr, and John E. Sanchez, Jr.

Coarsening of Three-Dimensional Droplets by Two-Dimensional Diffusion: Part I. Experiment [pp. 999-1006]
J.R. Rogers, J.P. Downey, W.K. Witherow, B.R. Facemire, D.O. Frazier, V.E. Fradkov, S.S. Mani, and M.E. Glicksman

Coarsening of Three-Dimensional Droplets by Two-Dimensional Diffusion: Part II. Theory [pp. 1007-1014]
V.E. Fradkov, S.S. Mani, M.E. Glicksman, J.R. Rogers, J.P. Downey, W.K. Witherow, B.R. Facemire, and D.O. Frazier

Effect of Dopants on Arsenic Precipitation in GaAs Deposited at Low Temperatures [pp. 1015-1020]
V. Mahadev, M.R. Melloch, J.M. Woodall, N. Otsuka, and G.L. Liedl

Interactions of Dislocations and Antiphase (Inversion) Domain Boundaries in III-V/IV Heteroepitaxy [pp. 1021-1026]
Eric P. Kvam

Microstructural Transitions in Titanium-Aluminum Thin Film Multilayers [pp. 1027-1034]
Rajiv Ahuja and Hamish L. Fraser

Transmission Electron Microscopy Detection of Microtexture Variations and Their Effects on Thin Film Stability [pp. 1035-1042]
Karen E. Harris and Alexander H. King

Microstructure of Sputtered Epitaxial Ni_0.80Fe_0.20/Ni_xCo_1-x Exchange Coupled Bilayers on -Al₂O₃ (0001) [pp. 1043-1046]
W. Cao, G. Thomas, M.J. Carey, and A.E. Berkowitz

REGULAR ISSUE PAPERS

The Effect of Substrate Surface Roughness on the Fracture Toughness of Cu/96.5Sn-3.5Ag Solder Joints [pp. 1047-1054]
E.I. Stromswold, R.E. Pratt, and D.J. Quesnel

A Simplified Model Describing Enhanced Growth Rates During Vapor Phase Selective Epitaxy [pp. 1055-1060]
M.F. Zybura, S.H. Jones, J.M. Duva, and J. Durgavich

(AlGa)As Grown by Low Pressure Metalorganic Vapor Phase Epitaxy Using a N₂ Carrier [pp. 1061-1066]
M. Hollfelder, Hilde Hardtdegen, R. Meyer, R. Carius, and H. Lüth

Effect of Nitridation on the Electrical Properties of W:Ti Resistors [pp. 1067-1070]
E. Lisicka-Skrzek, W. Coyne, G. Millar, and O. Berolo

Current-Voltage Characteristics of Electric Contacts on p-Type ZnSe [pp. 1071-1074]
Z. Yang and J.F. Schetzina

The Effects of Deposition Temperature on the Interfacial Properties of SiH₄ Reduced Blanket Tungsten on TiN Glue Layer [pp. 1075-1080]
Young J. Lee, Chong-Ook Park, Dong-Won Kim, and John S. Chun

LETTERS SECTION

Gas Composition Dependence of Silicon Nitride Used as Gallium Diffusion Barrier During GaAs Molecular Beam Epitaxy Growth on Si Complementary Metal Oxide Semiconductor [pp. 1081-1083]
J.A. Walker, K.W. Goossen, J.E. Cunningham, and W.Y. Jan

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