JOURNAL OF ELECTRONIC MATERIALS | |
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Volume 23, Number 3, March 1994 This Month Featuring: Special Issue on the Wide-Bandgap II-VI Semiconductors for Blue/Green Light Emitters, Regular Issue Papers, and Letters Section.
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Electrical Transport Characterizations of Nitrogen Doped ZnSe and ZnTe Films [pp. 245-250]
Y. Fan, J. Han, L. He, J. Saraie, R.L. Gunshor, M. Hagerott, and A.V. Nurmikko
Properties of Highly Conducting Nitrogen-Plasma-Doped ZnSe:N Thin Films [pp. 251-254]
K.A. Bowers, Z. Yu, K.J. Gossett, J.W. Cook, Jr., and J.F. Schetzina
Electrical Transport in n-Type ZnMgSSe Grown by Molecular Beam Epitaxy on GaAs [pp. 255-258]
T. Marshall, J.A. Petruzzello, S.P. Herko, J.M. Gaines, and C.A. Ponzoni
Nitrogen Doping of ZnSe by OMVPE Using a Novel Organometallic Precursor [pp. 259-262]
Salman Akram, Ishwara B. Bhat, and Andreas A. Melas
Nitrogen Doping in ZnSe by Photo-Assisted Metalorganic Vapor Phase Epitaxy [pp. 263-268]
Shizuo Fujita, Takeharu Asano, Kensaku Maehara, and Shigeo Fujita
Gas Source Molecular Beam Epitaxy of ZnSe and ZnSe:N [pp. 269-274]
C.A. Coronado, E. Ho, P.A. Fisher, J.L. House, K. Lu, G.S. Petrich, and L.A. Kolodziejski
Dislocation Nucleation Mechanism and Doping Effect in p-Type ZnSe/GaAs [pp. 275-282]
L.H. Kuo, L. Salamanca-Riba, J. M. DePuydt, H. Cheng, and J. Qiu
CdZnSe/ZnSe Strained Layer Superlattices Disordered by Germanium Diffusion [pp. 283-288]
T. Yokagawa, P.D. Floyd, J.L. Merz, H. Luo, and J.K Furdyna
Nanometer Fabrication Techniques for Wide-Gap II-VI Semiconductors and Their Optical Characterization [pp. 289-298]
C.M. Sotomayor Torres, A.P. Smart, M. Watt, M.A. Foad, K. Tsutsui and C.D.W. Wilkinson
Temperature and Flow Modulation Doping of Manganese in ZnS Electroluminescent Films by Low Pressure Metalorganic Chemical Vapor Deposition [pp. 299-306]
J.E. Yu, K.S. Jones, P.H. Holloway, B. Pathangey, E. Bretschneider, T. J. Anderson, S.S. Sun, and C.N. King
Multi-Mode Behavior of Optical Phonons in II-VI Ternary and Quaternary Alloys [pp. 307-312]
Eunsoon Oh and A.K. Ramdas
Stimulated Emission and Optical Gain in CdTe/CdMnTe Graded Index Separate Confinement Heterostructures [pp. 313-318]
R. Legras, Le Si Dang, C. Bodin, J. Cibert, F. Marcenat, G. Feuillet, J.L. Pautrat, D. Hervé, and E.Molva
Photoluminescence Study of GaAs Films on Si(100) Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy [pp. 331-336]
Yoshitaka Okada, Shigeru Ohta, Akio Kawabata, Hirofumi Shimomura, and Mitsuo Kawabe
An Evaluation of Contamination from Plasma Immersion Ion Implantation on Silicon Device Characteristics [pp. 337-340]
Shu Qin and Chung Chan
Energy Dependence and Depth Distribution of Electron Beam-Induced Damage in GaAs/AIGaAs Heterostructures [pp. 341-346]
Nobuyuki Tanaka and Tomonori Ishikawa
Gas Phase Synthesis and Processing of Silicon Nanocrystallites: Characterization by Photoluminescence Emission Spectroscopy [pp. 347-354]
L.A. Chiu, A.A. Seraphin, and K.D. Kolenbrander
Transient Grating Measurements of Ambipolor Diffusion and Carrier Recombination in InGaP/lnAlP Multiple Quantum Wells and InGaP Bulk [pp. 359-362]
M. Prasad, O.E. Martinez, C.S. Menoni J.J. Rocca, J.L.A. Chilla, M.J. Hafich, and G.Y. Robinson
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