JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 23, Number 2, February 1994 This Month Featuring: Special Issue on the 1993 Workshop on Organometallic Vapor Phase Epitaxy

SPECIAL ISSUE PAPERS

Probing the Mechanisms of Growth of Gallium Arsenide by Metalorganic Vapor Phase Epitaxy Using Experimental and Theoretical Studies of Designed Precursors [pp. 69-74]
D.F. Foster, C. Glidewell, and David J. Cole-Hamilton

Growth of High Mobility InSb by Metalorganic Chemical Vapor Deposition [pp. 75-80]
D.L. Partin, L. Green, and J. Heremans

High Quality Compressively Strained InP-Based GaInAs(P)/GaInAsP Multi-Quantum Well Laser Structures Grown by Metalorganic Vapor Phase Epitaxy [pp. 81-86]
S.D. Perrin, C.P. Seltzer, and P. C. Spurdens

Tertiarybutylarsine and Tertiarbutylphosphine for the MOCVD Growth of Low Threshold 1.55 µm In_xGa_1-xAs/InP Quantum-Well Lasers [pp. 87-92]
M.E. Heimbuch, A.L. Holmes, Jr., C.M Reaues, M.P. Mack, S.P. DenBaars, and L.A. Coldren

Constant Indium Delivery from Trimethylindium/Hexadecane Slurry [pp. 93-96]
L. W. Tannin, R.H. Pearce, and D. W. Webb

Lateral Growth of GaAs on Patterned {1 1 1}B Substrates for the Fabrication of Nano Wires Using Metalorganic Molecular Beam Epitaxy [pp. 97-100]
Yasuhiko Nomura, Yoshitaka Morishita, Shigeo Goto, and Yoshifumi Katayama

Impurity Induced Disordering of OMVPE-Grown ZnSe/ZnS Strained Layer Superlattices by Germanium Diffusion [pp. 101-104]
T. Yokagawa, P.D. Floyd, M.M Hashemi and J.L. Merz

Photodissociation Dynamics of DMZn at 193 nm: Implications for the Growth of ZnSe Films by Laser-Assisted Metalorganic Chemical Vapor Deposition [pp. 105-114]
Joseph A. Elias, Peter J. Wisoff, and William L. Wilson, Jr.

Wavelength Tuning in Strained Layer InGaAs-GaAs-AlGaAs Quantum Well Lasers by Selective-Area MOCVD [pp. 115-120]
T.M. Cockerill, D.V. Forbes, H. Han, B.A. Turkot, J.A. Dantzig, I.M. Robertson, and J.J. Coleman

Atmospheric and Low Pressure Metalorganic Vapor Phase Epitaxial Growth of Vertical Quantum Wells and Quantum Well Wires on Submicron Gratings [pp. 121-124]
G. Vermeire, I. Moerman, Z.Q. Yu, F. Vermaerke, P. Van Daele, and P. Demeester

Control of Ordering in GaInP and Effect on Bandgap Energy [pp. 125-134]
L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, and D. Bimberg

Optical and Crystallographic Properties of High Perfection InP Grown on Si (111) [pp. 135-140]
A. Krost, F. Heinrichsdorff, F. Schnabel, K. Schatke, D. Bimberg, and H. Cerva

High Electron Mobility in (InAs)_n (GaAs)_n Short Period Superlattices Grown by MOVPE for High-Electron Mobility Transistor Structure [pp. 141-146]
J.P. André, A. Deswarte, E. Lugagne-Delpon, P. Voisin, and P. Ruterana

Growth of (GaAs)_1-x (Ge₂)_x by Metalorganic Chemical Vapor Deposition [pp. 147-152]
S.M Vernon, M.M. Sanfacon, and R.K Ahrenkiel

Metalorganic Vapor Phase Epitaxial Growth and Structural Characterization of GaAs/InP Heterostructures [pp. 153-158]
G. Attolini, P. Franzosi C. Pelosi, L. Lazzarini and G. Salviati

Optimization of Selective Area Growth of GaAs by Low Pressure Organometallic Vapor Phase Epitaxy for Monolithic Integrated Circuits [pp. 159-166]
H. Kanber, S.X Bar, P.E. Norris, C. Beckham, and M. Pacer

Integrated In Situ Monitoring of a Metalorganic Vapor Phase Epitaxy Reactor for II-VI Epitaxy [pp. 167-174]
S.J.C. Irvine, J. Bajaj, and R.V. Gil

Ion Beam Mixing Characteristics of MOCVD Grown InGaAs/GaAs Superlattices [pp. 175-178]
D.V. Forbes, J.J. Coleman, J.L. Klatt, and R.S. Averback

In Situ Spectral Reflectance Monitoring of III-V Epitaxy [pp. 179-184]
K.P. Killeen and W.G. Breiland

Adjusting Trimethylgallium Injection Time to Explore Atomic Layer Epitaxy of GaAs Between 425 and 500°C by Organometallic Vapor Phase Epitaxy [pp. 185-190]
C A. Wang and D.M Tracy

Interdiffusion and Relaxation in Metalorganic Vapor Phase Epitaxy Grown InGaAs/GaAs Strained Layer Quantum Wells [pp. 191-194]
A.K Srivastava, B.M Arora, and S. Banerjee

In Situ Observation of Surface Morphology of InP Grown on Singular and Vicinal (001) Substrates [pp. 195-200]
K.A. Bertness, C. Kramer, J.M. Olson, and John Moreland

Strain Distribution in InP Grown on Patterned Si: Direct Visualization by Cathodoluminescence Wavelength Imaging [pp. 201-206]
M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, and D. Bimberg

Growth of InAlGaAs Strained Quantum Well Structures for Reliable 0.8 µm Lasers [pp. 207-216]
J.A. Baumann, R.J. Dalby, R.G. Waters, S.L. Yellen, C. Harding, and A. Shepard

Growth Kinetics of GaSb by Metalorganic Vapor Phase Epitaxy [pp. 217-220]
Wei Guang-yu and Peng Rui-wu

Reaction Kinetics Control in Preparation of CdTe and HgCdTe by Hot Wall Metalorganic Vapor Phase Epitaxy [pp. 221-224]
Ding Yong-qing, Wei Guang-yu, and Peng Rui-wu

Atmospheric and Low Pressure Shadow Masked MOVPE Growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs Heterostructures and Quantum Wells [pp. 225-232]
G. Coudenys, I. Moerman, G. Vermeire, F. Vermaerke, Y. Zhu, P. Van Daele, P. Demeester, E. Maayan, B. Elsner, J. Salzman, and E. Finkman

High Performance InP JFETs Grown by MOCVD Using Tertiarybutylphosphine [pp. 233-238]
M.M. Hashemi J.B. Shealy, P.J. Corvini S.P. DenBaars, and U.K Mishra

Carbon and Hydrogen Incorporation in ZnTe Layers Grown by Metalorganic Chemical Vapor Deposition [pp. 239-242]
Hervé Dumont, Ludvik Svob, Dominique Ballutaud, and Ouri Gorochov