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Recipient: 2005 John Bardeen Award

The Minerals, Metals & Materials Society's John Bardeen Award, established in 1994, recognizes an individual who has made outstanding contributions and is a leader in the field of electronic materials.

Recipient PhotoArthur C. Gossard

Citation: For outstanding contributions and leadership to the materials science of epitaxial crystal growth and to the physics of electronic structure and devices.

Biography: Arthur Gossard is a professor at the University of California, Santa Barbara. He graduated summa cum laude from Harvard University in 1956 with a B.A. and earned a Ph.D. from the University of California, Berkeley in 1960, both in physics. Prior to joining the University of California in 1987, Prof. Gossard was a distinguished member of the technical staff at AT&T Bell Laboratories 1960–1987.

Among his many honors, he was elected to the National Academy of Sciences in 2001,named a Fellow of the Institute of Electrical and Electronic Engineers in 2001, and received the American Physical Society McGroddy Prize for New Materials in 2001.


Quote:
“It is an honor to join the very distinguished ranks of the previous recipients of the John Bardeen Award. I am pleased by the recognition from TMS and my colleagues and by what this represents. It is very special to be associated with an award that recognizes the name of John Bardeen and his many contributions to both physics and electronic materials and devices.”

The information on this page is maintained by Nellie Luther (natale@tms.org).

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